Product Description:
| Specification | Value |
|---|---|
| Type | N-channel MOSFET |
| Drain-Source Voltage (Vds) | 55 V |
| Gate-Source Voltage (Vgs) | ±20 V |
| Continuous Drain Current (Id) | 49 A (at 25°C) |
| Pulsed Drain Current (Id,pulse) | 160 A (at 25°C) |
| Total Gate Charge (Qg) | 67 nC (typical at Vgs = 10V) |
| Gate Threshold Voltage (Vgs(th)) | 2.0 to 4.0 V (typical) |
| Rds(on) (Drain-Source Resistance) | 0.022 Ω (at Vgs = 10V) |
| Power Dissipation (Pd) | 94 W (at 25°C) |
| Thermal Resistance (Rθjc) | 1.3 °C/W (junction to case) |
| Thermal Resistance (Rθja) | 62.5 °C/W (junction to ambient) |
| Package Type | TO-220, TO-247 |
| Operating Junction Temperature (Tj) | -55°C to +150°C |
| Gate-Source Leakage Current (Igss) | 100 nA (at Vgs = ±20V) |
| Body Diode Forward Voltage (Vsd) | 1.2 V (typical) |
- Vds: Maximum Drain-Source Voltage.
- Vgs(th): The gate-source threshold voltage at which the MOSFET starts to conduct.
- Rds(on): The resistance between the drain and source when the MOSFET is fully on (at a given Vgs, typically 10V).
- Qg: The total charge needed to switch the MOSFET on or off.
- Pd: Maximum power dissipation; it depends on current and resistance (Rds(on)).
- Thermal Resistance: Indicates the MOSFET's ability to dissipate heat.
This is a general overview of the IRFZ44N MOSFET's key specs. You can refer to the datasheet for more detailed parameters and conditions.
Package Includes:
1x IRFZ44N N-Channel Power Mosfet